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here to check the Journal Impact Factor [1].Structural instabilities in the Bi(Pb)-Sr-Ca-Cu-O
superconductor between 80 and 300K studied by positron annihilation
Z.Tang, Z. Q. Chen, S.J.Wang, G.C.Ce and
Z.X.Zhao
J.Phys.:Condens.Matter,
5,345(1993)
[2].Observation of Spin-conversion of Positronium in Zeolite
Z. Q. Chen and S.J.Wang
Chin.Phys.Lett.
10,684(1993)
[3].Thermal expansion in the Bi(Pb)-2:2:2:3 superconductor
studied by positron annihilation
S.J.Wang, Z.Tang, Z. Q. Chen, X.H.Gao,
S.F.Jian and J.Li
Phys.Rev.B,
49,4319(1994)
[4].Positron Annihilation Technique and Zeolite
Z. Q. Chen, S.J.Wang
Nuclear Technique,10,616(1994) (in Chinese)
[5].Structural Anomalies and Charge Transfer in Cuprate
Superconductors Probed by Positrons
S.J.Wang, Z.Tang, Z. Q. Chen, Z.Y.Wu and
L.Ma
Physica
C235-240, 1219(1994)
[6].Surface prperties of Zeolite characterized by positron
annihilation technique
Z. Q. Chen, Z.Tang and S.J. Wang
Mater.
Sci. Forum, 175-178(1995)667
[7].Study of the Surface Properties of Zeolite Using Positron
Annihilation Technique
Z. Q. Chen, L.Ma and S.J.Wang
Phys.
Stat. Sol.(a)147,187(1995)
[8].Defect Properties of F-doped Bi(Pb)2223 superconductors
studied by positron Annihilation
S.J.Wang, Z.Tang, Z. Q. Chen, Z.Y,Wu and
L.Ma
Mater.Sci.Forum,
175-178(1995)565
[9].The Application of Laplace Inversion Technique in Analysis
of Positron Lifetime Spectra
S.J.Wang, Z. Q. Chen and L.Ma
J. Radioanal.& Nucl. Chem. Vol.211,No.1, 153(1996)
[10].Identification of Vacancy-type Defects in As-grown InP by
Positron Annihilation Rate Distribution Measurements
Z. Q. Chen, X.W.Hu, S.J.Wang and S.Q.LI
Solid
State Communication, Vol97, 951(1996)
[11].Positron Annihilation Studies of Defect Properties in
Semi -insulating GaAs
Z. Q. Chen, X.W.Hu and S.J.Wang
Phys.
Stat. Sol. (a)156,277(1996)
[12].Defect Properties in GaAs Studied by Positron
Annihilation
Z. Q. Chen, L.Ma, S.Q.Li, H.P.Yan
and S.J.Wang
Wuhan University J. of Natural Science,
Vol1,45(1996)
[13].Positron Annihilation Study of r-irradiated InP
L.Ma,S.Q.Li, Z. Q. Chen, X.W.Hu and
S.J.Wang
J.Wuhan University, 42,83(1996) (in
Chinese)
[14].Positron Annihilation Study of Secondary-pore structure
of USY Zeolite
L.Ma, Z. Q. Chen and S.J.Wang
Acta Physica Sinica, 46, 2267(1997)
[15].Positron Annihilation Study of Defects in High-energy
Heavy Ion Implanted III-V Compound Semiconductors
Z. Q. Chen, L.Ma, Z.Wang, J.Zhu,
X.W.Hu and S.J.Wang
Mater.Sci.Forum,
255-257, 518(1997)
[16].Vacancies and Impurities in InP Studied Using Positron
Lifetime and an Improved Doppler Broadening Spectrometer
Z. Q. Chen, X.W.Hu and
S.J.Wang
Appl.Phys.A66,
435(1998)
[17].Radiation Effect Study of InP Materials by High Energy
Heavy Ions
X.W.Hu, S.J.Wang, Z. Q. Chen, S.Q.Li
and M.D.Hou
Chinese J. Semiconductors, 19,16(1998)
(in Chinese)
[18].Discrimination of Defects in InP Semiconductors by
Positron Annihilation
Z. Q. Chen, X.W.Hu and S.J.Wang
Chinese J.Semiconductors, 19, 185(1998)
(in Chinese)
[19].Positron annihilation in zeolite USY
L.Ma, Z. Q. Chen, S.J.Wang, X.H.Luo
Nuclear Techniques, Vol.21, 334(1998)(in
Chinese)
[20].High Energy Heavy Ion Irradiation Effect in III-V Compound
Semiconductors
Z. Q. Chen, S.Q.Li, Z.Wang, X.W.Hu,
S.J.Wang, M.D.Hou
Nuclear
Physics Review, Vol.15, No.3, 161(1998) (in Chinese)
[21].Defect Property Study in Plastic Deformed p-GaAs
Z.Wang, S.J.Wang, Z. Q. Chen, L.Ma,
S.Q.Li
J.Wuhan University, 44, no.5, 601(1998) (in
Chinese)
[22].Evidence of Shallow Positron Traps in Ion-implanted InP
Observed by Maximum Entropy Reconstruction of Positron
Lifetime Distribution: A Test of
MELT
Z. Q. Chen and S.J.Wang
Nucl.Instr.Meth.B149,
343(1999)
[23].Vacancies and Negative Ions in As-Grown and Ion Bombarded
p-InP(Zn) Observed by Positron Annihilation
Z. Q. Chen and S.J.Wang
Semicond.
Sci. Technol. Vol.14, 271(1999)
[24].Interaction between Dopants and Native Defects in Zn
Doped p-InP Observed by Positron Annihilation
Z. Q. Chen, Z. Wang and S.J.
Wang
Chin.
Phys. Lett., Vol.16, no.8, 586(1999)
[25]. Positron Annihilation Study of the Dehydration of Secondary Pores in
Zeolite USY
J.Zhu, S.J.Wang, L.Ma, Z. Q. Chen
Acta
Physico-Chimica Sinica, Vol.15, no.11,1053 (1999) (in Chinese)
[26].Investigation of Defects in High-energy Heavy Ion
Implanted GaAs
Z. Q. Chen, Z.Wang and S.J.Wang
Applied Radiation
and Isotopes, 52, 39 (2000)
[27].Application of Positron Lifetime Distribution for the
Discrimination of Defects in Semiconductors
Z. Q. Chen, Z.Wang and S.J.Wang
Nucl. Instr. Meth. B,
160,139 (2000)
[28].Discrimination of Defects in III-V Semiconductors by
Positron Lifetime Distribution Measurement
Z. Q. Chen, Z.Wang and S.J.Wang
Radiation Phys.
Chem., 58, 703 (2000)
[29].Evidence of Defect Associates in Yttrium-stabilized
Zirconia
Z. Wang, Z. Q. Chen, J. Zhu, S. J.
Wang, X. Guo
Radiation Phys.
Chem, 58, 697 (2000)
[30].Defect Properties in Plastic Deformed p-GaAs Studied by
Positron Lifetime Measurements
Z.Wang, S.J.Wang, Z. Q. Chen, L.Ma
and S.Q.Li
Phys.
Stat. Sol. (a), 177, 341 (2000)
[31].Effect of defect associate on the electrical properties
of Nb-doped yttrium-stabilized zirconium
Z.Wang, Z. Q. Chen, S.J.Wang, X.Guo
J. Mater.
Sci. Lett. 19, 1275(2000)
[32].Observation of As-grown defects in Zn-doped GaAs by
positron lifetime spectra
Z.Wang, S.J.Wang, Z. Q. Chen
Chin.
Phys. Lett., Vol.17, no.11, 841(2000)
[33].Position Annihilation Study of Defects in III-V Compound Semiconductors
S.J.Wang, Z. Q. Chen and Z.Wang
J.Wuhan University, 46,67(2000) (in
Chinese)
[34].Temperature and radiation effects on positronium
formation
T.Suzuki, K.Kondo, E.Hamada, Z. Q. Chen,
Y.Ito
Radiation Phys.
Chem. 60, 535(2001)
[35].Temperature and Irradiation Effects on Positronium
Formation in Polycarbonate
Z. Q. Chen, T.Suzuki, A.Uedono,
S.Tanigawa, Y.Ito
Mater. Sci. Forum.
363-365, 297(2001)
[36].Polyamide/Acrylic Rubber Blend Studied by Positron Annihilation
M. Debowska, J. Rudzinska-Girulska, T. Suzuki, J. Piglowski,
Z. Q. Chen
Mater. Sci. Forum.
363-365, 300(2001)
[37].Study of defects in GaN grown by the two-flow
metalorganic chemical vapor deposition technique using monoenergetic positron
beams
A.Uedono, S.F.Chichibu, Z. Q. Chen, M.Sumiya, R.Suzuki,
T.Ohdaira, T.Mikado, T.Mukai, S.Nakamura
J. Appl. Phys.
90, 181(2001)
[38].Nanoporous structure of methyl-silsesquioxane films using
monoenergetic positron beams
A.Uedono, Z. Q. Chen, R.Suzuki,
T.Ohdaira, T.Mikado, S.Fukui, A.Shiota, S.Kimura
J. Appl. Phys.
90, 2498(2001)
[39].Free volume in polycarbonate studied by positron
annihilation: Effects of free radicals and trapped electrons on positronium formation
Z. Q. Chen, T.Suzuki, K.Kondo,
A.Uedono, Y.Ito
Japanese
J. Appl. Phys. Part 1, 40, 5036(2001)
[40].Oxygen-Related Defects in Low-Dose
Separation-by-Implanted Oxygen Wafers Probed by Monoenergetic Positron Beams
A. Uedono, Z. Q. Chen, A.Ogura,
H.Ono, R.Suzuki, T.Ohdaira, T.Mikado
J.
Appl. Phys. 90, no.12, 6026 (2001)
[41].Positron annihilation study of vacancy-type defects in silicon carbide co-implanted with aluminum and carbon ions.
T.Oshima, A. Uedono, H.Abe, Z. Q. Chen, H.Itoh, M.Yoshikawa, K.Abe, O.Eryu, K.Nakashima
Physica B
308-310, 652 (2001)
[42].Vacancy-type Defects in BaTiO3/SrTiO3 Structures Probed
by Monoenergetic Positron Beams
A.Uedono, K.Shimoyama, M.Kiyohara, Z. Q. Chen,
K.Yamabe, T.Ohdaira, R.Suzuki, T.Mikado
J.
Appl. Phys. 91, no.8, 5307 (2002)
[43].Defects in silicon-on-insulator wafers and their hydrogen interaction
studied by monoenergetic positron beams
A. Uedono, Z. Q. Chen, A.Ogura, R.Suzuki,
T.Ohdaira, T.Mikado
J.
Appl. Phys. 91, no.10, 6488 (2002)
[44].Oxygen-Related Defects and Their Annealing Behavior in
Low-Dose Separation-by-Implanted
Oxygen (SIMOX) Wafers Studied by Slow
Positron Beams
Z. Q. Chen, A. Uedono, A. Ogura, H.
Ono, R. Suzuki, T. Ohdaira and T. Mikado
Appl.
Surf. Sci. 194, no.1-4, 112(2002)
[45].Compatibilization of Metallocene Polyethylene/Polyamide
Blends with Maleic Anhydride Studied
by Positron Annihilation
Z. Q. Chen, A. Uedono, Y.Y. Li and
J.S. He
Japanese
J. Appl. Phys. part 1, 41, No.4A, 2146(2002)
[46].Study of oxygen vacancies in SrTiO3 by positron annihilation
Akira Uedono,
Kazuo Shimayama and Masahiro Kiyohara, Z. Q. Chen, Kikuo Yamabe
J. Appl. Phys.
92, 2697 (2002)
[47].Defects-induced volume deviations in ZnSe
H. Ebe, F. Sakurai, Z. Q. Chen, A.
Uedono, B. -P. Zhang, Y. Segawa, K. Suto and Jun-ichi Nishizawa
J.
Crystal. Growth, 237-239, 1566(2002)
[48].Positron Annihilation Study of Free Volume Holes in
Polymers and Polymer Blends
Z. Q. Chen, A. Uedono, T. Suzuki
and J.S. He
J. Radioanal.&
Nucl. Chem., Vol.255, no.2, 291-294(2003)
[49].Defects in ZnO thin films grown on ScAlMgO4 substrates probed
by a monoenergetic positron beam
A. Uedono, T. Koida, A. Tsukazaki, M. Kawasaki, Z. Q. Chen, SF. Chichibu,
H. Koinuma
J.
Appl. Phys. 93, 2481(2003)
[50].Improvement of Hydrogen Absorption Rate of Pd by Ion Irradiation
H. Abe, H. Uchida, Y. Azuma, A.
Uedono, Z. Q. Chen and H. Ito
Nucl. Instr. Meth. B, 206,
224(2003)
[51].Polyamide, acrylic rubber and their blends studied by positron annihilation and other
methods
M. Debowska, J. Piglowski, J. Rudzinska-Girulska, T. Suzuki and
Z. Q. Chen
Radiation Physics and
Chemistry, V68, 471(2003)
[52].Postgrowth annealing of defects in ZnO studied by positron annihilation, X-ray diffraction,
Rutherford backscattering,
cathodoluminescence and Hall measurements
Z. Q. Chen, S. Yamamoto, M. Maekawa, A. Kawasuso,
X. L. Yuan and T. Sekiguchi
J.
Appl. Phys. 94, 4807(2003)
[53].N+ ion-implantation induced defects in ZnO studied by slow
positron beam
Z. Q. Chen, T. Sekiguchi, X. L.
Yuan, M. Maekawa, and A. Kawasuso
J.Phys.:Condens.Matter,
16, S293(2004)
[54].Ion-implantation Induced Defects in ZnO Studied
by a Slow Positron Beam
Z. Q. Chen, M. Maekawa, T. Sekiguchi, R. Suzuki and A. Kawasuso
Material
Science Forum, Vol.445-446, 57(2004)
[55].Evolution of voids in Al+-implanted ZnO probed by a slow
positron beam
Z. Q. Chen, M. Maekawa,
S. Yamamoto, A. Kawasuso,
X. L. Yuan, T. Sekiguchi, R. Suzuki, and T. Ohdaira
Phys.
Rev. B69, 035210(2004)
[56].Production and recovery of
defects in phosphorus-implanted ZnO
Z. Q. Chen, A. Kawasuso,
Y. Xu, H. Naramoto, X. L. Yuan, T. Sekiguchi, R. Suzuki, and T. Ohdaira
J.
Appl. Phys. 97, 013528 (2005)
[57].Characterization of homoepitaxial and heteroepitaxial ZnO films grown by
pulsed laser deposition
Z. Q. Chen, S. Yamamoto,
A. Kawasuso, Y. Xu, and T. Sekiguchi
Appl.
Surf. Sci. 244, 377 (2005)
[58].Microvoid formation in hydrogen-implanted ZnO probed by a slow positron
beam
Z. Q. Chen, A. Kawasuso,
Y. Xu, H. Naramoto, X. L. Yuan, T. Sekiguchi, R. Suzuki, and T. Ohdaira
Phys. Rev. B 71, 115213 (2005)
[59].Structural defects in SiO2/SiC interface probed by a slow positron beam
M. Maekawa, A. Kawasuso, Z. Q. Chen, M. Yoshikawa, R. Suzuki and T. Ohdaira
Appl.
Surf. Sci. 244, 322 (2005)
[60].Interaction of nitrogen with vacancy defects in N+-implanted ZnO studied using a slow positron beam
Z. Q. Chen, M. Maekawa, A. Kawasuso, R. Suzuki, and T. Ohdaira
Appl. Phys. Lett. 87, 091910 (2005)
[61].Electron Irradiation Induced Defects in ZnO Studied by Positron Annihilation
Z. Q. Chen, M. Maekawa, A. Kawasuso, S. Sakai, and H. Naramoto
Physica B
376-377, 722 (2006)
[62]. Energy Variable Slow Positron Beam Study of
Li+-Implantation-Induced Defects in ZnO
Z. Q. Chen, M. Maekawa, A.
Kawasuso
Chinese Physics Letters, 23, 675 (2006)
[63]. Annealing process of ion-implantation-induced defects in
ZnO: Chemical
effect of the ion species
Z. Q. Chen, M. Maekawa,
A. Kawasuso, S. Sakai, and H. Naramoto
J.
Appl. Phys. 99, 093507 (2006)
[64]. Vacancy-type
defects induced by He-implantation in ZnO studied by a slow positron beam
Z. Q. Chen, A. Kawasuso
Acta Phys. Sin. 55, 4353 (2006)
[65]. Thermal evolution of defects in as-grown and electron-irradiated ZnO studied
by positron annihilation
Z. Q. Chen, S. J. Wang, M. Maekawa, A. Kawasuso, H. Naramoto, X. L. Yuan, and T. Sekiguchi
Phys. Rev. B 75, 245206 (2007)
[66]. Ion species dependence of the implantation-induced defects
in ZnO studied by a slow positron beam
Z. Q. Chen, M. Maekawa, A. Kawasuso, and H. Naramoto
Phys. Stat. Sol. (c) 4, 3646 (2007)
[67].Defects around self-organized InAs quantum dots measured by slow positron beam
X. Q. Meng, Z. Q. Chen, P. Jin, Z. G. Wang, and Long Wei
Appl. Phys. Lett. 91, 093510 (2007)
[68]. Vacancy defects in electron-irradiated ZnO studied by Doppler broadening
of annihilation radiation
Z. Q. Chen, K. Betsuyaku, A. Kawasuso
Phys. Rev. B 77, 113204 (2008)
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